Dry Etching for Germanium Waveguides by Using CHF3 Inductively Coupled Plasma

被引：0

作者：

Idris, Ahmad Syahrin ^{[1
]}

Jiang, Haisong ^{[1
]}

Hamamoto, Kiichi ^{[1
]}

机构：

[1] Kyushu Univ, I EggS, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan

来源：

2015 20TH MICROOPTICS CONFERENCE (MOC) | 2015年

关键词：

SILICON;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHF3 gas. It realizes a high selectivity of 5: 1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched sidewall angle of 85 degree with an etching rate of 190 nm/min.

引用

页数：2

共 5 条

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