Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation

被引：58

作者：

Ami, T ^{[1
]}

Ishida, Y ^{[1
]}

Nagasawa, N ^{[1
]}

Machida, A ^{[1
]}

Suzuki, M ^{[1
]}

机构：

[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1351849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of CeO2(001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO2(001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 degreesC with a Si(001)-2x1, 1x2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by theta /2 theta -scan and phi -scan of x-ray diffraction. (C) 2001 American Institute of Physics.

引用

页码：1361 / 1363

页数：3

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