Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design

被引：39

作者：

Rajabi, Kamran ^{[1
]}

Wang, Jiaxing ^{[2
]}

Jin, Jie ^{[1
]}

Xing, Yuchen ^{[1
]}

Wang, Lai ^{[1
]}

Han, Yanjun ^{[1
]}

Sun, Changzheng ^{[1
]}

Hao, Zhibiao ^{[1
]}

Luo, Yi ^{[1
]}

Qian, Keyuan ^{[1
]}

Chen, Chien-Ju ^{[3
]}

Wu, Meng-Chyi ^{[3
]}

机构：

[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Dept Elect Engn, Beijing 100084, Peoples R China

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, 253 Cory Hall, Berkeley, CA 94720 USA

[3] Taiwan Natl Tsing Hua Univ, Dept Elect Engn, 101,Sect 2,Kuang Fu Rd, Hsinchu 30013, Taiwan

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 19期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

SPEED; BARRIER; LAYERS; LEDS;

D O I：

10.1364/OE.26.024985

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The GaN-based light emitting diodes (LEDs) have a great potential for visible light communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate in InGaN quantum wells (QWs) due to the polarization-field-induced quantum confined Stark effect (QCSE). Furthermore, the high modulation bandwidth on c-plane sapphire substrates can only be achieved at high current densities. Here, blue LEDs with ultra-thin InGaN QWs (1nm) and GaN barriers (3nm) are grown on c-plane sapphire substrate to suppress QCSE and extend the cut-off frequency from 214 MHz for conventional LEDs to 536 MHz at a current density of 2.5 kA/cm(2), which is comparable to devices grown on semi-polar substrates. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：24985 / 24991

页数：7

共 30 条

[1]

[Anonymous], OPT FIB COMM C EXP O

[2] A band-structure model of strained quantum-well wurtzite semiconductors [J].