2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics

被引:0
作者
Gharibzadeh, Saba [1 ,2 ]
Hossain, Ihteaz M. [1 ,2 ]
Fassl, Paul [1 ,2 ]
Mertens, Adrian [2 ]
Schaefer, Soeren [3 ]
Rienacker, Michael [3 ]
Wietler, Tobias [3 ]
Peibst, Robby [4 ]
Richards, Bryce S. [1 ,2 ]
Paetzold, Ulrich W. [1 ,2 ]
机构
[1] Karlsruhe Inst Technol, Inst Microstruct Technol, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
[2] Karlsruhe Inst Technol, Light Technol Inst, Engesserstr 13, D-76131 Karlsruhe, Germany
[3] Inst Solar Energy Res Hamelin ISFH, Ohrberg 1, D-31860 Emmerthal, Germany
[4] Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany
来源
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年
关键词
wide-bandgap; 2D/3D heterostructure; passivation layer; perovskite; silicon; poly-Si; tandem solar cells;
D O I
10.1109/pvsc45281.2020.9300952
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (E-g) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (V-OC) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.
引用
收藏
页码:1344 / 1345
页数:2
相关论文
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