Optical parametric oscillator based on microstructured GaAs

被引：10

作者：

Vodopyanov, KL ^{[1
]}

Levi, O ^{[1
]}

Kuo, PS ^{[1
]}

Pinguet, TJ ^{[1
]}

Harris, JS ^{[1
]}

Fejer, MM ^{[1
]}

Gerard, B ^{[1
]}

Becouarn, L ^{[1
]}

Lallier, E ^{[1
]}

机构：

[1] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

来源：

SOLID STATE LASER TECHNOLOGIES AND FEMTOSECOND PHENOMENA | 2004年 / 5620卷

关键词：

frequency conversion; mid-infrared; optical parametric oscillators; gallium arsenide;

D O I：

10.1117/12.578449

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal, 0.5-mm-thick, 5-mm-wide, and 11-mm-long, with a domain reversal period of 61.2 mum. By tuning either the near-IR pump wavelength between 1.75 and 2 mum, or the temperature of the GaAs crystal, the mid-IR output tuned between 2 and 11 mum, limited only by the spectral range of the OPO mirrors. The pump threshold of the singly-resonant OPO was 16 muJ for the 6-ns pump pulses, and the photon conversion slope efficiency reached 54%. Also, we show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.

引用

页码：63 / 69

页数：7

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