Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor -: art. no. 187405

被引：69
作者：
Fu, KMC [1 ]
Santori, C
Stanley, C
Holland, MC
Yamamoto, Y
机构：
[1] Stanford Univ, Quantum Entanglement Project, ICORP, JST,Edward L Ginzton Lab, Stanford, CA 94305 USA
[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
[4] Natl Inst Informat, Tokyo, Japan
来源：
PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 18期
关键词：
D O I：
10.1103/PhysRevLett.95.187405
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.
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