共 15 条
[2]
SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
[J].
PHYSICAL REVIEW B,
1990, 41 (09)
:5701-5706
[3]
MOVPE growth of homoepitaxial germanium
[J].
JOURNAL OF CRYSTAL GROWTH,
2008, 310 (14)
:3282-3286
[5]
INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001)
[J].
PHYSICAL REVIEW B,
1990, 42 (18)
:11682-11689
[6]
MEDIUM-ENERGY-ION-SCATTERING INVESTIGATIONS OF SI AND GE GROWTH ON GAAS(001)-C(2X8)/(2X4)
[J].
PHYSICAL REVIEW B,
1993, 47 (15)
:9610-9614
[7]
KANDEL D, 2000, SOLID STATE PHYS, V54, P3
[10]
PRESSURE-DEPENDENCE OF RAMAN PHONONS OF GE AND 3C-SIC
[J].
PHYSICAL REVIEW B,
1982, 25 (02)
:1151-1160