AFM morphological characterization and Raman study of germanium grown on (111)GaAs

被引：2

作者：

Attolini, G. ^{[1
]}

Bosi, M.

Calicchio, M.

Martinez, O.

Hortelano, V.

机构：

[1] IMEM CNR Inst, I-43124 Parma, Italy

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 9-10期

关键词：

Germanium; Growth; AFM; Raman; GE; EPITAXY; MOSFETS; SI;

D O I：

10.1016/j.susc.2012.01.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this communication we report on the growth of Ge heterolayers on (100), (111)Ga and (111)As surfaces of GaAs substrates. Arsenic can play a role as both dopant and surfactant, changing the growth mechanism for the Ge/GaAs growth on (001) oriented substrates. The use of substrates oriented in different directions can change the growth mode and produce different results, since surface polarity can induce different growth modes: we have compared the results on (111) substrates with respect to the non-polar surface case. The growth behavior on (001), (111)Ga and (111)As substrates is discussed. The layer morphology was investigated by Atomic Force Microscopy and Raman spectroscopy has been carried out as a function of the sample thickness. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：808 / 812

页数：5

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