Strain Effects on Properties of Phosphorene and Phosphorene Nanoribbons: a DFT and Tight Binding Study

被引:10
作者
Zhang, Ruo-Yu [1 ]
Zheng, Ji-Ming [2 ]
Jiang, Zhen-Yi [1 ]
机构
[1] Northwest Univ Xian, Dept Phys, Xian 710069, Shaanxi, Peoples R China
[2] Northwest Univ Xian, Inst Photon & Photon Technol, Natl Photoelect Technol & Funct Mat & Applicat Sci, Natl Key Lab Photoelect Technol & Funct Mat Cultue, Xian 710069, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; LAYER BLACK PHOSPHORUS; WAVE BASIS-SET; 1ST-PRINCIPLES; SEMICONDUCTOR; TRANSISTORS; TRANSITION; MOBILITY; MOS2;
D O I
10.1088/0256-307X/35/1/017302
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We perform comprehensive density functional theory calculations of strain effect on electronic structure of black phosphorus (BP) and on BP nanoribbons. Both uniaxial and biaxial strain are applied, and the dramatic change of BP's band structure is observed. Under 0-8% uniaxial strain, the band gap can be modulated in the range of 0.55-1.06 eV, and a direct-indirect band gap transition causes strain over 4% in the.. direction. Under 0-8% biaxial strain, the band gap can be modulated in the range of 0.35-1.09 eV, and the band gap maintains directly. Applying strain to BP nanoribbon, the band gap value reduces or enlarges markedly either zigzag nanoribbon or armchair nanoribbon. Analyzing the orbital composition and using a tight-binding model we ascribe this band gap behavior to the competition between effects of different bond lengths on band gap. These results would enhance our understanding on strain effects on properties of BP and phosphorene nanoribbon.
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页数:5
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