AlN substrates and epitaxy results

被引：29

作者：

Helava, Heikki ^{[1
]}

Chemekova, Tat'jana ^{[2
]}

Avdeev, Oleg ^{[2
]}

Mokhov, Eugeny ^{[2
]}

Nagalyuk, Sergey ^{[2
]}

Makarov, Yuri ^{[2
]}

Ramm, Mark ^{[1
]}

机构：

[1] Helava Syst Inc, 181 Ind Ct,Ste B, Deer Pk, NY 11729 USA

[2] Nitride Crystals Ltd, St Petersburg 194256, Russia

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlN; growth from vapour; structure; defects; optical properties;

D O I：

10.1002/pssc.200983619

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Aluminum nitride (AlN) is a true bulk-grown native substrate for III-nitrides. The crystals are grown by seeded physical vapor transport (PVT) using AlN seeds. AlN has high thermal conductivity ( comparable to, and perhaps higher than SiC), high bulk resistivity (>1x10(11) Ohm cm), high bulk-breakdown field (7-8 MV/cm), the highest surface acoustic wave (SAW) velocity and since it has the smallest lattice constant of the III-nitrides all AlInGaN compositions grown on AlN are in compression, thus making it easier to grow crack-free epitaxy. Additionally, AlN is transparent down to nearly 200 nm, making it attractive for deep UV LED structures. AlN has excellent cleavage planes making it suitable for edge-emitting lasers and low cost manufacturing. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 3 条

[1]

Lundin W. V., 2008, P 6 ALL RUSS C GALL, P100

[2] Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates [J].

Nikishin, SA ;

Borisov, BA ;

Chandolu, A ;

Kuryatkov, VV ;

Temkin, H ;

Holtz, M ;

Mokhov, EN ;

Makarov, Y ;

Helava, H .

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[3] Characterization of bulk AlN crystals with positron annihilation spectroscopy [J].

Tuomisto, F. ;

Maki, J. -M. ;

Chemekova, T. Yu. ;

Makarov, Yu. N. ;

Avdeev, O. V. ;

Mokhov, E. N. ;

Segal, A. S. ;

Ramm, M. G. ;

Davis, S. ;

Huminic, G. ;

Helava, H. ;

Bickermann, M. ;

Epelbaum, B. M. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :3998-4001

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