Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed light generation

被引：20

作者：

Lathi, S ^{[1
]}

Tanaka, K

Morita, T

Inoue, S

Kan, H

Yamamoto, Y

机构：

[1] Stanford Univ, Edward L Ginzton Lab, ERATO, Quantum Fluctuat Project, Stanford, CA 94305 USA

[2] Hamamatsu Photon KK, Cent Res Lab, Hamamatsu, Shizuoka, Japan

[3] Nihon Univ, Coll Sci & Technol, Atom Energy Res Inst, Tokyo 1018305, Japan

[4] NTT, Basic Res Labs, Kanagawa, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 03期

关键词：

amplitude-squeezed light; DX centers and intensity noise of laser; saturable absorption in T[!text type='JS']JS[!/text] lasers; semiconductor lasers; subshot-noise light; TSJ lasers;

D O I：

10.1109/3.748845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated 850-nm GaAs transverse-junction-stripe (TJS) lasers by an improved metal-organic chemical vapor deposition (MOCVD) and double Zn diffusion process. The high V/III ratio used during the MOCVD growth significantly reduced the intermixing of GaAs active layer and AlGaAs cladding layers. The modified process realized good confinement for both carriers and photons and smaller saturable loss. We measured squeezing of -2.8 dB (-4.5 dB after correction for detection efficiency) at a pumping rate of I/I-th approximate to 20 from these lasers, which is in close agreement with the theoretical limit. This squeezing remained unchanged under injection locking, indicating almost perfect conservation of the intensity noise correlation among the longitudinal modes. These TJS lasers had very small low-frequency 1/f noise.

引用

页码：387 / 394

页数：8