Patterned growth and field emission properties of vertically aligned carbon nanotubes

被引:85
作者
Choi, YC
Shin, YM
Bae, DJ
Lim, SC
Lee, YH
Lee, BS
机构
[1] Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea
[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[3] Jeonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
[4] Jeonbuk Natl Univ, Div Adv Mat Engn, Jeonju 561756, South Korea
关键词
carbon nanotube; patterned growth; field emission property; adsorbate;
D O I
10.1016/S0925-9635(01)00380-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vertically aligned carbon nanotubes were grown selectively on patterned Ni thin films by microwave plasma-enhanced chemical vapor deposition and their field emission properties were investigated using a diode-structure. Ni thin films patterned with a form of dot-arrays were prepared using a shadow mask having an array of holes. The nanotubes were found to be well-graphitized with multiwalled structures. The measurements of field emission properties revealed that the carbon nanotube tips emitted high current density at low macroscopic electric field. The Fowler-Nordheim (F-N) plot clearly showed two characteristic regions where the current saturates at the high electric field region. It was found that the saturation behavior was caused by the adsorbates-enhanced field emission mechanism. Eliminating the adsorbates resulted in no saturation behavior, increasing turn-on field, decreasing current, and increasing field enhancement factor. Using ZnS/Cu,Al phosphor, very bright and uniform emission patterns were obtained. (C) 2001 Elsevier Science B.V. Adl rights reserved.
引用
收藏
页码:1457 / 1464
页数:8
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