Improved room-temperature 1.6 μm electroluminescence from p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes

被引：16

作者：

Suzuno, Mitsushi ^{[1
]}

Murase, Shigemitsu ^{[1
]}

Koizumi, Tomoaki ^{[1
]}

Suemasu, Takashi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 02期

关键词：

D O I：

10.1143/APEX.1.021403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have epitaxially grown p-Si/beta-FeSi2/n-Si double heterostructures light-emitting diodes (LEDs) on Si(111) substrates by molecular-beam epitaxy. The 1.6 mu m electroluminescence intensity measured at room temperature (RT) was improved significantly for LEDs constructed using a thick beta-FeSi2 active layer (190 nm) embedded in heavily-doped Si p - n diodes formed on floating-zone Si(111) substrates. The external quantum efficiency was increased up to approximately 0.02% at RT. (c) 2008 The Japan Society of Applied Physics.

引用

页数：3

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