Diamond for Electronics: Materials, Processing and Devices

被引:59
作者
Araujo, Daniel [1 ]
Suzuki, Mariko [1 ]
Lloret, Fernando [2 ]
Alba, Gonzalo [1 ]
Villar, Pilar [1 ]
机构
[1] Univ Cadiz, Dept Mat Sci & Engn, Puerto Real 11510, Spain
[2] Univ Cadiz, Dept Appl Phys, Puerto Real 11510, Spain
关键词
diamond; MPCVD growth; power electronics; electron microscopy; INTERFACE ROUGHNESS SCATTERING; CHEMICAL-VAPOR-DEPOSITION; HOMOEPITAXIAL CVD DIAMOND; ENERGY-LOSS SPECTROSCOPY; SCHOTTKY DIODES; BARRIER HEIGHT; ELECTRICAL CHARACTERIZATION; SURFACE CONDUCTIVITY; POLYCRYSTALLINE DIAMOND; RECOMBINATION RADIATION;
D O I
10.3390/ma14227081
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga's figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.
引用
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页数:25
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