Ellipsometry Characterization of Hydrogenated Amorphous Silicon Layers Formed on Textured Crystalline Silicon Substrates

被引：9
作者：
Watanabe, Kouji [1 ]
Matsuki, Nobuyuki [1 ]
Fujiwara, Hiroyuki [1 ]
机构：
[1] Gifu Univ, CIPS, Gifu 5011193, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 11期
关键词：
SOLAR-CELLS;
D O I：
10.1143/APEX.3.116604
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogenated amorphous silicon (a-Si:H) layers formed on textured single crystalline silicon (c-Si) substrates have been characterized by spectroscopic ellipsometry using a tilt angle measurement configuration. The a-Si:H layer thickness determined by this technique (58 +/- 2 angstrom) shows excellent agreement with that evaluated from transmission electron microscopy (56 +/- 5 angstrom). Although no structural change has been observed between a-Si:H layers deposited on flat and textured substrates, the a-Si:H layer thickness was found to decrease by 30% on the textured substrates. The above results demonstrate that the tilt angle ellipsometry measurement is quite effective in characterizing a-Si:H layers incorporated in textured a-Si:H/c-Si heterojunction solar cells. (c) 2010 The Japan Society of Applied Physics
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页数：3
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