Crossbar Switch Matrix for Floating-Gate Programming Over Large Current Ranges

被引：0
|
作者：
Degnan, Brian P. [1 ]
Duffy, Christopher J. [1 ]
Hasler, Paul E. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS | 2010年
关键词：
INJECTION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A floating-gate, cross-bar switch matrix with a novel programming method is presented. Single-polysilicon floating-gate transistors are used to hold a "bit" state programmed with short-channel pFET devices that demonstrate hot-electorn injection over a large current range. Hot-electron injection modeling in pFETs is contrasted across various channel lengths and bias currents. Circuit design and physical layout are discussed, and characterization data is presented from a matrix fabricated in a 0.5 mu m, scalable CMOS process available through MOSIS.
引用
收藏
页码：861 / 864
页数：4
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