Circularly Polarized Light Emission from Semiconductor Planar Chiral Nanostructures

被引：170

作者：

Konishi, Kuniaki ^{[1
,2
,3
]}

Nomura, Masahiro ^{[4
,5
]}

Kumagai, Naoto ^{[4
]}

Iwamoto, Satoshi ^{[4
,5
]}

Arakawa, Yasuhiko ^{[4
,5
]}

Kuwata-Gonokami, Makoto ^{[1
,2
,3
,6
]}

机构：

[1] Univ Tokyo, Photon Sci Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[3] CREST JST, Tokyo 1138656, Japan

[4] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan

[5] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[6] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 05期

关键词：

DILUTE MAGNETIC SEMICONDUCTOR; ELECTRICAL SPIN INJECTION; PHOTONIC CRYSTALS; QUANTUM DOTS; LASERS; FLUORESCENCE;

D O I：

10.1103/PhysRevLett.106.057402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate circularly polarized light emission from InAs quantum dots embedded in the waveguide region of a GaAs-based chiral nanostructure. The observed phenomenon originates due to a strong imbalance between left- and right-circularly polarized components of the vacuum field and results in a degree of polarization as high as 26% at room temperature. A strong circular anisotropy of the vacuum field modes inside the chiral nanostructure is visualized using numerical simulation. The results of the simulation agree well with experimental results.

引用

页数：4

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