Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

被引：46

作者：

Wistisen, T. N. ^{[1
]}

Uggerhoj, U. I. ^{[1
]}

Wienands, U. ^{[2
,6
]}

Markiewicz, T. W. ^{[2
]}

Noble, R. J. ^{[2
]}

Benson, B. C. ^{[2
]}

Smith, T. ^{[2
]}

Bagli, E. ^{[3
,4
]}

Bandiera, L. ^{[3
,4
]}

Germogli, G. ^{[3
,4
]}

Guidi, V. ^{[3
,4
]}

Mazzolari, A. ^{[3
,4
]}

Holtzapple, R. ^{[5
]}

Tucker, S. ^{[5
]}

机构：

[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus, Denmark

[2] SLAC Natl Accelerator Lab, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA

[3] Univ Ferrara, Dept Phys & Earth Sci, Via Saragat 1-C, I-44122 Ferrara, Italy

[4] INFN, Sect Ferrara, Via Saragat 1-C, I-44122 Ferrara, Italy

[5] Calif Polytech State Univ San Luis Obispo, San Luis Obispo, CA 93407 USA

[6] Argonne Natl Lab, 9700 S Cass Ave, Argonne, IL 60439 USA

来源：

PHYSICAL REVIEW ACCELERATORS AND BEAMS | 2016年 / 19卷 / 07期

基金：

美国国家科学基金会;

关键词：

CHARGED-PARTICLES; UNDULATOR; RADIATION;

D O I：

10.1103/PhysRevAccelBeams.19.071001

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

引用

页数：11

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