topological insulators;
planar Hall effect;
Landauer Buttiker approach;
D O I:
10.1088/1361-648X/ac06ea
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Recently, in topological insulators (TIs) the phenomenon of planar Hall effect wherein a current driven in presence an in-plane magnetic field generates a transverse voltage has been experimentally witnessed. There have been a couple of theoretical explanations of this phenomenon. We investigate this phenomenon based on scattering theory on a normal metal (NM)-TI-normal metal hybrid structure and calculate the conductances in longitudinal and transverse directions to the applied bias. The transverse conductance depends on the spatial location between the two NM-TI junctions where it is calculated. It is zero in the drain electrode when the chemical potentials of the top and the bottom TI surfaces (mu (t) and mu (b) respectively) are equal. The longitudinal conductance is pi-periodic in phi-the angle between the bias direction and the direction of the in-plane magnetic field. The transverse conductance is pi-periodic in phi when mu (t) = mu (b) whereas it is 2 pi-periodic in phi when mu (t) not equal mu (b). As a function of the magnetic field, the magnitude of transverse conductance increases initially and peaks. At higher magnetic fields, it decays for angles phi closer to 0, pi whereas oscillates for angles phi close to pi/2. The conductances oscillate with the length of the TI region. A finite width of the system makes the transport separate into finitely many channels. The features of the conductances are similar to those in the limit of infinitely wide system except when the width is so small that only one channel participates in the transport. When only one channel participates in transport, the transverse conductance in the region 0 < x < L is zero for mu (t) = mu (b) and the transverse conductance in the region x > L is zero even for the case mu (t) not equal mu (b). We understand the features in the obtained results.