Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures

被引：5

作者：

Cramman, Helen ^{[1
]}

Eastwood, David S. ^{[1
]}

King, Jennifer A. ^{[1
]}

Atkinson, Del ^{[1
]}

机构：

[1] Univ Durham, Dept Phys, Durham DH1 3LE, England

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2012年 / 11卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

2-D-; and; 3-D-MRAM; Binary-octal conversion; control architecture; magnetic tunnel junction (MTJ) stacking; multibit memory; TUNNEL-JUNCTIONS; MAGNETORESISTANCE;

D O I：

10.1109/TNANO.2011.2149538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Designs for two novel multilevelmagnetic random access memory (MRAM) concepts are presented in this paper along with their associated control circuit architectures. Both the ChiralMEM and 3-D-MRAM concepts contain eight states with distinct electrical resistances, giving a 3 bit-per-cell capacity. Operation of the two memory concepts are presented along with designs for the circuitry in particular focusing on the conversion of three conventional binary bits to octal encoded data and the required sequence for writing eight states per cell using current-driven magnetic fields. Discrimination and subsequent conversion of the eight readout resistance levels back to three conventional binary bits are discussed along with the write sequence for controlling arrays of multibit memory cells.

引用

页码：63 / 70

页数：8

共 36 条

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