Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si

被引：0
|
作者：
Gokce, Bilal [1 ]
Adles, Eric J. [1 ]
Aspnes, David E. [1 ]
Gundogdu, Kenan [1 ]
机构：
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
Silicon; nonlinear optics; oxidation; second-harmonic generation;
D O I：
10.1063/1.3666321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate both directional control and measurement of the oxidation of H-terminated (111)Si. Control is achieved through externally applied strain, with strained back bonds oxidizing faster than unstrained ones. Real-time measurement is achieved by second-harmonic generation (SHG), with SHG anisotropy data analyzed with the anisotropic bond-charge model of nonlinear optics. Anisotropic oxidation also results in structural changes, which appear as rotations of the average orientations of the back bonds from their unperturbed directions.
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页数：2
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