Recrystallized parylene as a mask for silicon chemical etching

被引：0

作者：

Lo, Hsi-wen ^{[1
]}

Kuo, Wen-Cheng ^{[1
,2
]}

Yang, Yao-Joe ^{[2
]}

Tai, Yu-Chong ^{[1
]}

机构：

[1] CALTECH, Dept Elect Engn, 1200 E Calif Blvd, Pasadena, CA 91125 USA

[2] Natl Taiwan Univ, Dept Mech Engn, Taipei, Taiwan

来源：

2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3 | 2008年

关键词：

parylene; silicon wet etching; recrystallization;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350 degrees C for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interface between parylene and the substrate can be attacked, which results in undercuts. Otherwise, recrystallized parylene exhibited good adhesion to silicon, complete protection of unexposed silicon and silicon etching rates comparable to literature data.

引用

页码：881 / +

页数：2