Advanced FIB mask repair technology for 90nm/ArF lithography (3)

被引：1

作者：

Tanaka, Y ^{[1
]}

Itou, Y ^{[1
]}

Yoshioka, N ^{[1
]}

Hagiwara, R ^{[1
]}

Yasaka, A ^{[1
]}

Takaoka, O ^{[1
]}

Kozakai, T ^{[1
]}

Koyama, Y ^{[1
]}

Sawaragi, H ^{[1
]}

Sugiyama, Y ^{[1
]}

Muramatsu, M ^{[1
]}

Doi, T ^{[1
]}

Suzuki, K ^{[1
]}

Okabe, M ^{[1
]}

Shinohara, M ^{[1
]}

Matsuda, O ^{[1
]}

Aita, K ^{[1
]}

Adachi, T ^{[1
]}

Morikawa, Y ^{[1
]}

Nishiguchi, M ^{[1
]}

Satoh, Y ^{[1
]}

Hayashi, N ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2003年 / 5256卷

关键词：

ArF lithography; 90nm node;

D O I：

10.1117/12.518026

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The SIR5000 mask repair system was developed with an FIB system featuring new ion optics, modified SED detectors, new platform software and optimized repair processes to repair 130nm/ArF generation masks. Thereafter we have continuously improved it for 90nm/ArF lithography and evaluated its performance such as edge placement repeatability, lithography simulation and printing tests. The transmittance of FIB imaging area is more than 97% over 40 times scans, and the printing result data also shows that the imaging damage by FIB scans does not affect CD until around 40 times. The repair performance of edge placement repeatability has below 15nm capability, and the lithography simulation data satisfies the ArF transmittance requirement. The ED windows of both repaired opaque and clear defects almost overlap no repaired reference ones, and they show that the printing performance of repaired mask does not have any printing issues. Consequently, we demonstrated that the improved SIR5000 capability has reached the 90nm node mask technology requirement.

引用

页码：526 / 537

页数：12

共 5 条

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Hagiwara, R ;

Yasaka, A ;

Takaoka, O ;

Kozakai, T ;

Yabe, S ;

Koyama, Y ;

Muramatsu, M ;

Doi, T ;

Suzuki, K ;

Okabe, M ;

Aita, K ;

Adachi, T ;

Kubo, S ;

Yoshioka, N ;

Morimoto, H ;

Morikawa, Y ;

Iwase, K ;

Hayashi, N .

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII, 2001, 4409 :555-562

[2]

HAGIWARA R, 2002, SPIE, V4889, P1056

[3]

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[4] Advanced FIB mask repair technology for ArF lithography [J].

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Kubo, S ;

Morimoto, H ;

Yasaka, A ;

Hagiwara, R ;

Adachi, T ;

Morikawa, Y ;

Iwase, K ;

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PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII, 2000, 4066 :523-530

[5]

Kubo S, 2000, P SOC PHOTO-OPT INS, V4186, P158

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