The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

被引：4
作者：
Balakrishnan, VR
Kumar, V
Ghosh, S
机构：
[1] Solid State Phys Lab, Delhi 110054, India
[2] Natl Phys Lab, New Delhi 110012, India
[3] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期
关键词：
D O I：
10.1088/0268-1242/20/8/024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic (CDLTS) studies of an AlGaAs/InGaAs pseudomorphic high electron mobility transistor (p-HEMT) were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low-frequency negative transconductance dispersion as well as the apparent 'hole' like peaks observed in the CDLTS spectra. This model incorporates a time-dependent change in the two-dimensional electron gas mobility due to ionized impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface.
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收藏
页码：783 / 787
页数：5
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