Visible photoluminescence from Ge quantum dots

被引：31

作者：

Sun, KW ^{[1
]}

Sue, SH

Liu, CW

机构：

[1] Natl Dong Hwa Univ, Dept Phys, Hualien, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 28卷 / 04期

关键词：

photoluminescence; Ge quantum dot; Raman spectroscopy;

D O I：

10.1016/j.physe.2005.05.063

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Spectroscopic analyses on stacked Ge quantum dots (QDs) on Si (100) substrates are presented. Strong and visible photoluminescence around 620 nm from stacked Ge QDs is observed. The luminescence is intense and clearly visible to the naked eye at both room temperature and low temperature. We have investigated the temperature dependence of the luminescence, as well as the composition of Ge dots via transmission electron microscopy and the Raman spectroscopy. Possible causes of the visible luminescence are also speculated in this report. (c) 2005 Elsevier B.V. All rights reserved.

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页码：525 / 530

页数：6

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