Formation and organization of amino terminated self-assembled layers on Si(001) surface

被引:27
|
作者
Demirel, G. [1 ,2 ]
Caglayan, M. O. [1 ,2 ]
Garipcan, B. [1 ,2 ]
Duman, M. [1 ,2 ]
Piskin, E. [1 ,2 ]
机构
[1] Hacettepe Univ, Dept Chem Engn, TR-06800 Ankara, Turkey
[2] Hacettepe Univ, Div Bioengn, TR-06800 Ankara, Turkey
来源
NANOSCALE RESEARCH LETTERS | 2007年 / 2卷 / 07期
关键词
N-(3-trimethoxysilylpropyl) diethylenetriamine (TPDA); hydroxylated silicon; self-assembled monolayer; ellipsometry; Si(001) surface;
D O I
10.1007/s11671-007-9071-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the effects of dipping time, solution concentration and solvent type on the formation of self-assembled monolayers with aminosiloxane molecules (i.e., N-(3 trimethoxysilylpropyl) diethylenetriamine (TPDA)) on the Si(001) surface. Studies performed with an ellipsometer showed that monolayers with a thickness of about 1.2 nm were formed when the dipping time is about 2 h, while multilayer were observed for longer time periods. The effect of the TPDA concentration on the thickness of the deposited layer was not very profound, however, the contact angle data exhibit importance of concentration on the surface coverage. The type of the solvent used in the formation of the monolayers was found an important parameter. Monolayers were formed with solvent having larger dielectric constants. Relatively thick multilayer was observed when benzene was used as the solvent, due to its quite low dielectric constant (hydrophobicity).
引用
收藏
页码:350 / 354
页数:5
相关论文
共 50 条
  • [21] Coarsening of self-assembled Ge quantum dots on Si(001)
    Ross, FM
    Tersoff, J
    Tromp, RM
    PHYSICAL REVIEW LETTERS, 1998, 80 (05) : 984 - 987
  • [22] Self-assembled molecular array in methylamine dissociation on Si(001)
    Cho, JH
    Kleinman, L
    PHYSICAL REVIEW B, 2003, 67 (20)
  • [23] Lithographic positioning of self-assembled Ge islands on Si(001)
    Kamins, TI
    Williams, RS
    APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1201 - 1203
  • [24] Self-assembled Gd silicide nanostructures grown on Si(001)
    Ye, Gangfeng
    Crimp, Martin A.
    Nogami, Jun
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)
  • [25] Shape transitions of self-assembled Ge islands on Si(001)
    Rastelli, A
    Kummer, M
    von Känel, H
    CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, 2002, 696 : 151 - 156
  • [26] Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots
    Pérez-Centeno, A
    Méndez-García, VH
    Zamora-Peredo, L
    Saucedo-Zeni, N
    López-López, M
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 236 - 242
  • [27] Silicide formation during Mn doping of Ge/Si (001) self-assembled quantum dots
    Kassim, J.
    Nolph, Christopher A.
    Jamet, Matthieu
    Reinke, Petra
    Floro, Jerrold A.
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (23) : 3210 - 3217
  • [28] Silicide formation during Mn doping of Ge/Si (001) self-assembled quantum dots
    J. Kassim
    Christopher A. Nolph
    Matthieu Jamet
    Petra Reinke
    Jerrold A. Floro
    Journal of Materials Research, 2013, 28 : 3210 - 3217
  • [29] Surface-potential reversibility of an amino-terminated self-assembled monolayer based on nanoprobe chemistry
    Saito, N
    Lee, SH
    Takahiro, I
    Hieda, J
    Sugimura, H
    Takai, O
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (23): : 11602 - 11605
  • [30] Surface plasmon resonance analysis of aqueous copper ions with amino-terminated self-assembled monolayers
    Hong, Surin
    Kang, Taewook
    Moon, Jungwoo
    Oh, Seogil
    Yi, Jongheop
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2007, 292 (2-3) : 264 - 270