Formation and organization of amino terminated self-assembled layers on Si(001) surface

被引:27
|
作者
Demirel, G. [1 ,2 ]
Caglayan, M. O. [1 ,2 ]
Garipcan, B. [1 ,2 ]
Duman, M. [1 ,2 ]
Piskin, E. [1 ,2 ]
机构
[1] Hacettepe Univ, Dept Chem Engn, TR-06800 Ankara, Turkey
[2] Hacettepe Univ, Div Bioengn, TR-06800 Ankara, Turkey
来源
NANOSCALE RESEARCH LETTERS | 2007年 / 2卷 / 07期
关键词
N-(3-trimethoxysilylpropyl) diethylenetriamine (TPDA); hydroxylated silicon; self-assembled monolayer; ellipsometry; Si(001) surface;
D O I
10.1007/s11671-007-9071-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have investigated the effects of dipping time, solution concentration and solvent type on the formation of self-assembled monolayers with aminosiloxane molecules (i.e., N-(3 trimethoxysilylpropyl) diethylenetriamine (TPDA)) on the Si(001) surface. Studies performed with an ellipsometer showed that monolayers with a thickness of about 1.2 nm were formed when the dipping time is about 2 h, while multilayer were observed for longer time periods. The effect of the TPDA concentration on the thickness of the deposited layer was not very profound, however, the contact angle data exhibit importance of concentration on the surface coverage. The type of the solvent used in the formation of the monolayers was found an important parameter. Monolayers were formed with solvent having larger dielectric constants. Relatively thick multilayer was observed when benzene was used as the solvent, due to its quite low dielectric constant (hydrophobicity).
引用
收藏
页码:350 / 354
页数:5
相关论文
共 50 条
  • [1] Formation and Organization of Amino Terminated Self-assembled Layers on Si(001) Surface
    G Demirel
    MO Çağlayan
    B Garipcan
    M Duman
    E Pişkin
    Nanoscale Research Letters, 2
  • [2] On the formation of self-assembled Ge/Si(001) quantum dots
    Le Thanh, V
    Boucaud, P
    Zheng, Y
    Younsi, A
    Débarre, D
    Bouchier, D
    Lourtioz, JM
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1212 - 1217
  • [3] THE ORGANIZATION OF ALIPHATIC CHAINS IN SELF-ASSEMBLED LAYERS ON THE WATER-SURFACE
    PETERSON, IR
    MOHWALD, H
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 87 - POLY
  • [4] Ge self-assembled islands grown on SiGe/Si(001) relaxed buffer layers
    Shaleev, MV
    Novikov, AV
    Kuznetsov, OA
    Yablonsky, AN
    Vostokov, NV
    Drozdov, YN
    Lobanov, DN
    Krasilnik, ZF
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 466 - 469
  • [5] Controlling the width of self-assembled dysprosium silicide nanowires on the Si(001) surface
    Cui, Y.
    Chung, J.
    Nogami, J.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (04)
  • [6] Formation and evolution of self-assembled crystalline Si nanorings on (001)Si mediated by Au nanodots
    He, JH
    Wu, WW
    Chueh, YL
    Hsin, CL
    Chen, LJ
    Chou, LJ
    APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
  • [7] Fabrication of an amino-terminated organic surface by chemical conversion of a nitro-terminated self-assembled monolayer
    Al-Rawashdeh, N. A. F.
    Azzam, W.
    Woell, Ch.
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS, 2008, 222 (5-6): : 965 - 978
  • [8] Formation and Structure of Copper(II) Oxalate Layers on Carboxy-Terminated Self-Assembled Monolayers
    Schrader, I.
    Wittig, L.
    Richter, K.
    Vieker, H.
    Beyer, A.
    Goelzhaeuser, A.
    Hartwig, A.
    Swiderek, P.
    LANGMUIR, 2014, 30 (40) : 11945 - 11954
  • [9] Nucleation and growth of self-assembled Ge/Si (001) quantum dots in single and stacked layers
    Le Thanh, V
    Yam, V
    Zheng, Y
    Bouchier, D
    THIN SOLID FILMS, 2000, 380 (1-2) : 2 - 9