Single miller capacitor frequency compensation techniques: Theoretical comparison and critical review

被引:4
作者
Grasso, Alfio Dario [1 ]
Marano, Davide [2 ]
Palumbo, Gaetano [1 ]
Pennisi, Salvatore [1 ]
机构
[1] Univ Catania, Dept Elect Elect & Comp Engn DIEEI, I-95125 Catania, Italy
[2] INAF Natl Inst Astrophys, Astrophys Observ Catania, Catania, Italy
关键词
CMOS analog integrated circuits; frequency compensation; multistage amplifiers; operational transconductance amplifiers; 3-STAGE CMOS OTAS; SETTLING-TIME; OPERATIONAL-AMPLIFIER; DESIGN METHODOLOGY; VOLTAGE BUFFER; LOAD; OPTIMIZATION; AREA;
D O I
10.1002/cta.3244
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a systematic analytical comparison of the single-Miller capacitor frequency compensation techniques suitable for three-stage complementary metal-oxide-semiconductor (CMOS) operational transconductance amplifiers (OTAs). The comparison is carried out with the aid of a figure of merit that expresses a trade-off among gain-bandwidth product, load capacitance, and total transconductance, for equal values of the phase margin. The results found can be used before the transistor-level design step and provide useful guidelines for the optimization of the small-signal performance. Simulations by using a 65-nm standard CMOS technology confirming the effectiveness of the theoretical comparison for 10 different OTA topologies are also provided.
引用
收藏
页码:1462 / 1486
页数:25
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