Investigation of the composition-structure-property relationship of AsxTe100-x films prepared by plasma deposition

被引：34

作者：

Mochalov, Leonid ^{[1
,2
]}

Dorosz, Dominik ^{[3
]}

Nezhdanov, Aleksey ^{[1
]}

Kudryashov, Mikhail ^{[1
]}

Zelentsov, Sergey ^{[1
]}

Usanov, Dmitry ^{[1
]}

Logunov, Alexandr ^{[1
]}

Mashin, Aleksandr ^{[1
]}

Gogova, Daniela ^{[4
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod, Russia

[2] Nizhnii Novgorod State Tech Univ, Nizhnii Novgorod, Russia

[3] AGH Univ Sci & Technol Krakow, Krakow, Malopolska, Poland

[4] Bulg Acad Sci, Cent Lab Solar Energy & New Energy Sources, Blvd Tzarigradsko Shose 72, Sofia 1784, Bulgaria

来源：

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY | 2018年 / 191卷

基金：

俄罗斯科学基金会;

关键词：

As-Te chalcogenide films; Optical properties; Raman spectroscopy; Laser annealing; GE-S-I; NEUTRON-DIFFRACTION; TE; GLASSES; CRYSTALLIZATION; SYSTEM;

D O I：

10.1016/j.saa.2017.10.038

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

AsxTe100 - x amorphous films of different chemical content were prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). For the first time the optical properties of As-Te chalcogenide materials have been measured in UV-VIS-IR ranges (from 0.2 to 25 mu m) for a very wide range of chemical compositions (20-80 at.% As). As-Te films have been tuned from 0.80 to 1.10 eV. The IR results obtained have been juxtaposed with the Raman spectroscopy findings to establish the correlation between optical and structural properties of the materials developed. Reversible and irreversible changes in the phase composition of the As-Te films under annealing of the surface by laser irradiation have been demonstrated and studied. In order to determine the potential areas of application of the prepared As-Te films the thermal and photo sensitivity has been also investigated. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：211 / 216

页数：6

共 33 条

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[Anonymous], 2014, WOODH PUB SER ELECT

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Bagley B.G., 1974, Amorphous and liquid semiconductors

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