Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

被引：7

作者：

Kim, Byung-Jae ^{[2
]}

Kim, Hong-Yeol ^{[2
]}

Kim, Jihyun ^{[2
]}

Jang, Soohwan ^{[1
]}

机构：

[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[2] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 326卷 / 01期

关键词：

Neutron irradiation; GaN; SiC; High electron mobility transistor; FIELD-EFFECT TRANSISTORS; HEMTS; GAN; PERFORMANCE;

D O I：

10.1016/j.jcrysgro.2011.01.098

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 x 100 mu m(2) gate were irradiated with a dose of 2.8 x 10(11) cm(-2) neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：205 / 207

页数：3

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