Vapor-liquid-solid growth of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition

被引：0

作者：

Su, J ^{[1
]}

Gherasimova, M ^{[1
]}

Cui, G ^{[1
]}

Han, J ^{[1
]}

Lim, S ^{[1
]}

Ciuparu, D ^{[1
]}

Pfefferle, L ^{[1
]}

He, Y ^{[1
]}

Nurmikko, AV ^{[1
]}

Broadbridge, C ^{[1
]}

Lehman, A ^{[1
]}

Onuma, T ^{[1
]}

Kurimoto, M ^{[1
]}

Chichibu, SF ^{[1
]}

机构：

[1] Yale Univ, Fac Engn & Appl Sci, New Haven, CT 06520 USA

来源：

GAN, AIN, INN AND THEIR ALLOYS | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E-2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

引用

页码：753 / 758

页数：6

共 12 条

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