Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed

被引：17
作者：
Chen, Yi-Jung [1 ,2 ]
Tai, Ya-Hsiang [3 ,4 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Inst Display, Hsinchu 30010, Taiwan
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 04期
关键词：
THIN-FILM TRANSISTORS; BIAS STRESS; TEMPERATURE; DEGRADATION; GATE;
D O I：
10.1149/2.0041504ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional time step in the measurement and must be considered. (C) The Author(s) 2015. Published by ECS. All rights reserved.
引用
收藏
页码：Q10 / Q12
页数：3
相关论文
共 14 条
[1]   Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor Under Gate-Bias Stress [J].
Chen, Fa-Hsyang ;
Pan, Tung-Ming ;
Chen, Ching-Hung ;
Liu, Jiang-Hung ;
Lin, Wu-Hsiung ;
Chen, Po-Hsueh .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (05) :635-637
[2]   Investigation of the gate-bias induced instability for InGaZnO TFTs under dark and light illumination [J].
Chen, T. C. ;
Chang, T. C. ;
Hsieh, T. Y. ;
Tsai, C. T. ;
Chen, S. C. ;
Lin, C. S. ;
Jian, F. Y. ;
Tsai, M. Y. .
THIN SOLID FILMS, 2011, 520 (05) :1422-1426
[3]   Life in the Digital Cloud [J].
Chen, Thomas M. .
IEEE NETWORK, 2011, 25 (01) :2-2
[4]   Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors [J].
Jo, Jeong-Wan ;
Kim, Yong-Hoon ;
Park, Sung Kyu .
APPLIED PHYSICS LETTERS, 2014, 105 (04)
[5]   Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress [J].
Kim, Jong In ;
Cho, In-Tak ;
Joe, Sung-Min ;
Jeong, Chan-Yong ;
Lee, Daeun ;
Kwon, Hyuck-In ;
Jin, Sung Hun ;
Lee, Jong-Ho .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (04) :458-460
[6]   Light-Induced Hysteresis of In-Ga-Zn-O Thin-Film Transistors With Various Temperatures [J].
Kuk, Seung-Hee ;
Lee, Soo-Yeon ;
Kim, Sun-Jae ;
Kim, Binn ;
Park, Soo-Jeong ;
Kwon, Jang-Yeon ;
Han, Min-Koo .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) :1279-1281
[7]   High performance, transparent a-IGZO TFTs on a flexible thin glass substrate [J].
Lee, Gwang Jun ;
Kim, Joonwoo ;
Kim, Jung-Hye ;
Jeong, Soon Moon ;
Jang, Jae Eun ;
Jeong, Jaewook .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (03)
[8]   Investigation of Photo-Induced Hysteresis and Off-Current in Amorphous In-Ga-Zn Oxide Thin-Film Transistors Under UV Light Irradiation [J].
Lee, Soo-Yeon ;
Kwon, Jang-Yeon ;
Han, Min-Koo .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (08) :2574-2579
[9]   Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor [J].
Mai Phi Hung ;
Wang, Dapeng ;
Jiang, Jingxin ;
Furuta, Mamoru .
ECS SOLID STATE LETTERS, 2014, 3 (03) :Q13-Q16
[10]  
Migliorato S., 2012, APPL PHYS LETT, V101
12