A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs

被引:33
作者
Li, Chengmin [1 ]
Chen, Saizhen [1 ]
Luo, Haoze [1 ]
Li, Chushan [2 ]
Li, Wuhua [1 ]
He, Xiangning [1 ]
机构
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Univ Illinois Urbana, Champaign Inst, Hangzhou 310027, Peoples R China
关键词
Silicon carbide; Snubbers; MOSFET; Logic gates; Inductors; Voltage control; Capacitors; Medium-voltage converters; series connection; SiC MOSFETs; SiC power module; GATE-DRIVER; MODULE;
D O I
10.1109/TPEL.2021.3068667
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Series connection of SiC power MOSFET is an attractive approach to expand the blocking voltage of SiC devices, whereas the dynamic voltage balancing among the series-connected devices is the most critical challenge of the technique. In this article, a simple, fast, and cost-effective dynamic voltage balancing circuit of the series-connected SiC MOSFETs is proposed to suppress the voltage imbalance among the devices. The proposed circuit is composed of a resistor-capacitor (RC) snubber with a coupled inductor to effectively sense the voltage imbalance and add a compensated signal to the gate driving voltage. In the article, the operation principle of the proposed method is described in detail and the parameter selection of the circuit is given. Then the optimized layout of the circuit in a typical half-bridge SiC power module is proposed to reduce the stray parameters introduced by the coupled inductor effectively. The proposed method is verified by experiments under different conditions. Compared with a purely RC snubber balancing strategy, the capacitor can be significantly reduced. Since only passive components are required in the feedback loop, the proposed method demonstrates a reliable and straightforward approach to achieve equal voltage sharing of the series-connected devices.
引用
收藏
页码:11208 / 11220
页数:13
相关论文
共 33 条
[1]  
Alves L. F. S., 2018, 2018 20 EUROPEAN C P, P1
[2]  
[Anonymous], FUNDAMENTALS POWER S
[3]  
[Anonymous], SIC POWER MODULE DAT
[4]   Balancing Circuit for a 5-kV/50-ns Pulsed-Power Switch Based on SiC-JFET Super Cascode [J].
Biela, Juergen ;
Aggeler, Daniel ;
Bortis, Dominik ;
Kolar, Johann W. .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2012, 40 (10) :2554-2560
[5]  
Bolotnikov A, 2015, APPL POWER ELECT CO, P2445, DOI 10.1109/APEC.2015.7104691
[6]  
Chen SZ, 2020, APPL POWER ELECT CO, P2588, DOI [10.1109/apec39645.2020.9124078, 10.1109/APEC39645.2020.9124078]
[7]   Analytical Switching Loss Modeling Based on Datasheet Parameters for MOSFETs in a Half-Bridge [J].
Christen, Daniel ;
Biela, Jurgen .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (04) :3700-3710
[8]  
Das MK, 2011, IEEE ENER CONV, P2689, DOI 10.1109/ECCE.2011.6064129
[9]   A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI [J].
Dymond, Harry C. P. ;
Wang, Jianjing ;
Liu, Dawei ;
Dalton, Jeremy J. O. ;
McNeill, Neville ;
Pamunuwa, Dinesh ;
Hollis, Simon J. ;
Stark, Bernard H. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (01) :581-594
[10]  
Gerster C, 1996, IEEE POWER ELECTRON, P1739, DOI 10.1109/PESC.1996.548815