DC and high-frequency characteristics of GaN-based IMPATTs

被引：43
|
作者：
Panda, AK [1 ]
Pavlidis, D [1 ]
Alekseev, E [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 04期
关键词：
gallium nitride; high-frequency; impact ionization; IMPATT diodes; Wurtzite phase; zinc-blende phase;
D O I：
10.1109/16.915735
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dynamic characteristics of Wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operations. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.
引用
收藏
页码：820 / 823
页数：4
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