DC and high-frequency characteristics of GaN-based IMPATTs

被引：45

作者：

Panda, AK ^{[1
]}

Pavlidis, D ^{[1
]}

Alekseev, E ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 04期

关键词：

gallium nitride; high-frequency; impact ionization; IMPATT diodes; Wurtzite phase; zinc-blende phase;

D O I：

10.1109/16.915735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dynamic characteristics of Wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operations. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation.

引用

页码：820 / 823

页数：4

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