Compact modeling of noise for RF CMOS circuit design

被引：1
|
作者：
Scholten, AJ [1 ]
Tiemeijer, LF [1 ]
van Langevelde, R [1 ]
Havens, RJ [1 ]
Zegers-van Duijnhoven, ATA [1 ]
de Kort, R [1 ]
Venezia, VC [1 ]
Klaassen, DBM [1 ]
机构：
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
NOISE IN DEVICES AND CIRCUITS | 2003年 / 5113卷
关键词：
noise; compact modeling; RF CMOS; MOSFET; thermal noise; induced gate noise; avalanche noise; shot noise;
D O I：
10.1117/12.492939
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
We study the the thermal noise of short-channel NMOS transistors in a commercially available 0.13 mum CMOS technology. The experimental results are modeled with a non-quasi-static RF model, based on the principle of channel segmentation. The model is capable of predicting both drain and gate current noise accurately, without fitting any parmeters to the measured noise data. An essential ingredient of the model is the gate resistance which is shown to dominate the gate current noise. In our optimized device layouts, this gate resistance is mainly determined by the silicide-to-polysilicon contact resistance.
引用
收藏
页码：93 / 104
页数：12
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