Temperature stress on pristine ZnO nanowire field effect transistor

被引：15

作者：

Kim, Kyoungwon ^{[1
,2
,3
]}

Debnath, Pulak Chandra ^{[1
]}

Kim, Sangsig ^{[2
,3
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[3] Korea Univ, Inst Nano Sci, Seoul 136701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 11期

关键词：

FABRICATION;

D O I：

10.1063/1.3567795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (V(th)) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in V(th) is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in V(th) in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567795]

引用

页数：3

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