Power Semiconductor Module With Low-Permittivity Material to Reduce Common-Mode Electromagnetic Interference

被引：21

作者：

Shin, Jong-Won ^{[1
,2
]}

Wang, Chi-Ming ^{[1
]}

Dede, Ercan M. ^{[1
]}

机构：

[1] Toyota Motor Engn & Mfg North Amer, Ann Arbor, MI 48105 USA

[2] Chung Ang Univ, Sch Energy Syst Engn, Seoul 06974, South Korea

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2018年 / 33卷 / 12期

关键词：

Common-mode (CM) current; conducted electromagnetic interference (EMI); power semiconductor module; parasitic capacitance; EMI-FILTER; NOISE; CONVERTER; VOLTAGE;

D O I：

10.1109/TPEL.2018.2828041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The layout of a low-permittivity material is designed in a power semiconductor module to reduce parasitic common-mode (CM) capacitance and hence attenuate the CM current. Without sacrificing the thermal performance between the semiconductor devices and heat sink, a portion of the bottom copper of a direct-bond-copper substrate is replaced by air to decrease capacitance. The proposed power module is verified in a 1-kW 100-kHz buck converter. The CM current is decreased by 8 dB in the frequency domain without any additional components or filters.

引用

页码：10027 / 10031

页数：5

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