On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar Cells

被引：29

作者：

Dongaonkar, Sourabh ^{[1
]}

Karthik, Y. ^{[2
]}

Wang, Dapeng ^{[3
]}

Frei, Michel ^{[3
]}

Mahapatra, Souvik ^{[2
]}

Alam, Muhammad A. ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[3] Appl Mat Inc, Solar Business Grp, Santa Clara, CA 95054 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期

关键词：

Amorphous silicon solar; dark current; shunt leakage; space-charge-limited (SCL) current;

D O I：

10.1109/LED.2010.2064754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si: H p-i-n solar cells and show that it is characterized by following universal features: 1) voltage symmetry; 2) power-law voltage dependence; and 3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured "shunt-contaminated" forward dark IV. We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental observations from literature.

引用

页码：1266 / 1268

页数：3

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