SrBi2(Ta0.5Nb0.5)2O9:W thin films obtained by chemical solution deposition:: Morphological and ferroelectric characteristics

被引：3

作者：

Amsei Júnior, N. L. ^{[2
]}

Simoes, A. Z. ^{[3
]}

Cavalcante, L. S. ^{[1
]}

Moura, E. ^{[2
]}

Longo, E. ^{[2
]}

Varela, J. A. ^{[2
]}

机构：

[1] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil

[2] Univ Estadual Paulista, Dept Quim Fis, Inst Quim, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil

[3] Univ Estadual Paulista, Dept Quim, Fac Ciencias, BR-17033360 Bauru, SP, Brazil

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 461卷 / 1-2期

基金：

巴西圣保罗研究基金会;

关键词：

thin films; ferroelectrics; chemical synthesis; atomic force microscopy; dielectric response;

D O I：

10.1016/j.jallcom.2007.06.115

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of tungsten (W6+) ion substituting on dielectric and ferroelectric behavior in SrBi2(Ta0.5Nb0.5)(2)O-9 (SBTN) thin films prepared by polymeric precursor method was investigated at room temperature. The addition of W6+ ion in the SBTN lattice was evaluated by X-ray diffraction (XRD), microstructural and dielectrical properties. An increase in the grain size is evident when tungsten is introduced in the SBTN lattice. Substitution of tungsten until 10% on B site leads to introduce space charge polarization into the system, resulting in an appreciable decrease in both dielectric constant and tangent loss. The morphology of the thin films investigated by atomic force microscopy leads to an increase in the grain size after tungsten addition. Fatigue resistance was noted with increase in tungsten addition. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：326 / 330

页数：5

共 25 条

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