Transient Performance of SiC MOSFETs as a Function of Temperature

被引：13

作者：

Lawson, Kevin ^{[1
]}

Bayne, Stephen B. ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Ctr Pulsed Power & Power Elect, Lubbock, TX 79409 USA

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2011年 / 18卷 / 04期

关键词：

DC-DC power conversion; silicon compounds; MOS devices; RLC circuits; POWER DEVICES;

D O I：

10.1109/TDEI.2011.5976105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This research was completed to study the effects of extreme transient conditions on Silicon Carbide MOSFET devices. Two different transient conditions that are common in power converters were studied in this paper. The first is effects of voltage rise time, or dV/dt, on these devices. The second is the effects of current pulses with short pulse width and high peak currents. Both of these tests were conducted at temperatures of 150 degrees C to determine the performance of these devices in high stress environments. For both of these experiments, testing apparatus had to be designed and built to create these specific conditions.

引用

页码：1124 / 1129

页数：6

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