High-Voltage Sharp-Recovery 4H:SiC Drift Diodes: Theoretical Estimation of Limiting Parameters

被引：8
|
作者：
Ivanov, P. A. [1 ]
Grekhov, I. V. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS | 2015年 / 60卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
Space Charge Region; Mobility Ratio; Electron Drift Velocity; Nonequilibrium Carrier; Pulse Rise Time;
D O I：
10.1134/S1063784215060092
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple mathematical model of 4H:SiC sharp-recovery drift diodes with a p(+)-p(-)n(0)-n(+) structure. With this model, the limiting electrical parameters of high-voltage (2-10 kV) pulse generators built around these diodes are theoretically estimated.
引用
收藏
页码：897 / 902
页数：6
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