Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

被引：78

作者：

Bonfanti, M. ^{[1
]}

Grilli, E.

Guzzi, M.

Virgilio, M.

Grosso, G.

Chrastina, D.

Isella, G.

von Kaenel, H.

Neels, A. ^{[2
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Sci Mat, CNISM, I-20125 Milan, Italy

[2] Univ Neuchatel, Inst Microtechnol, CH-2002 Neuchatel, Switzerland

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.78.041407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp(3)d(5)s(*) tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

引用

页数：4

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