Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

被引：20

作者：

Filatova, Elena O. ^{[1
]}

Konashuk, Aleksei S. ^{[1
]}

Sakhonenkov, Sergei S. ^{[1
]}

Gaisin, Aidar U. ^{[1
]}

Kolomiiets, Nadiia M. ^{[2
]}

Afanas'ev, Valeri V. ^{[2
]}

Dekkers, Harold F. W. ^{[3
]}

机构：

[1] St Petersburg State Univ, Inst Phys, St Petersburg 198504, Russia

[2] Univ Leuven, Semicond Phys Lab, B-3001 Leuven, Belgium

[3] IMEC, B-3001 Leuven, Belgium

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2020年 / 124卷 / 28期

基金：

俄罗斯科学基金会;

关键词：

X-RAY-ABSORPTION; TITANIUM NITRIDE; PHOTOELECTRON-SPECTROSCOPY; INITIAL OXIDATION; THIN-FILMS; XPS; MODULATION; DEPOSITION; ALD;

D O I：

10.1021/acs.jpcc.0c03605

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By use of a combination of electrical measurements and internal photoemission interface barrier characterization, the effective workfunction (EWF) changes of nm-thin TiN layer deposited on top of oxide insulators (SiO2, HfO2) have been correlated with atomic and chemical composition of the metal/oxide interfaces characterized by photoelectron spectroscopy and X-ray absorption. The major mechanisms of the EWF tuning are shown to be correlated to redistribution of light N and O atoms. Oxygen scavenging from the underlying oxides changes the TiN EWF by forming a Ti oxynitride layer at the interface and introducing charge traps in the near-interface oxide layer. By contrast, significant (approximate to 1 eV) reduction of EWF can be achieved by introduction of a thin TiAl getter layer on top of TiN film. The mechanism of this reduction can be traced to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced by AlN formation.

引用

页码：15547 / 15557

页数：11

共 50 条

[21] Thermal stability of a HfO2/SiO2 interface
Ikarashi, N
Watanabe, K
Masuzaki, K
Nakagawa, T
APPLIED PHYSICS LETTERS, 2006, 88 (10)
[22] Current transport mechanisms in (HfO2)x(SiO2)1-x/SiO2 gate stacks
Mitrovic, I. Z.
Lu, Y.
Buiu, O.
Hall, S.
MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2306 - 2309
[23] Preparation of SiO2/HfO2 high reflectors
Key Laboratory of Advanced Micro-Structure Materials, Department of Physics, Tongji University, Shanghai 200092, China
不详
Qiangjiguang Yu Lizishu, 2012, 6 (1276-1280):
[24] Modeling HfO2/SiO2/Si interface
Gavartin, J. L.
Shluger, A. L.
MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2412 - 2415
[25] Effective work function of scandium nitride gate electrodes on SiO2 and HfO2
Yang, HD
Heo, S
Lee, D
Choi, S
Hwang, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (1-3): : L83 - L85
[26] The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode
Lu, WT
Lin, PC
Huang, TY
Chien, CH
Yang, MJ
Huang, IJ
Lehnen, P
APPLIED PHYSICS LETTERS, 2004, 85 (16) : 3525 - 3527
[27] A study of HfO2 film interfaces with Si and SiO2 -: art. no. 024101
Lopez, CM
Irene, EA
JOURNAL OF APPLIED PHYSICS, 2006, 99 (02) : 1 - 7
[28] Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2
Afanas'ev, V. V.
Chiappe, D.
Huyghebaert, C.
Radu, I.
De Gendt, S.
Houssa, M.
Stesmans, A.
MICROELECTRONIC ENGINEERING, 2015, 147 : 294 - 297
[29] Investigation of electron and hole mobilities in MOSFETs with TiN/HfO2/SiO2 gate stack
Lime, F
Ghibaudo, G
Guillaumot, B
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 247 - 250
[30] Preparation of ultrathin HfO2 films and comparison of HfO2/SiO2/Si interfacial structures
Tan, RQ
Azuma, Y
Fujimoto, T
Fan, JW
Kojima, I
SURFACE AND INTERFACE ANALYSIS, 2004, 36 (08) : 1007 - 1010

← 1 2 3 4 5 →