A Nonpiecewise Model for Long-Channel Junctionless Cylindrical Nanowire FETs

被引：56

作者：

Duarte, Juan P. ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Moon, Dong-Il ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Bulk current; compact model; cylindrical nanowire (NW) FET; junctionless (JL) transistor; semiconductor device modeling; surface current; DOUBLE-GATE;

D O I：

10.1109/LED.2011.2174770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nonpiecewise drain current model is formulated for long-channel junctionless (JL) cylindrical nanowire (CN) FETs. It is obtained by using the Pao-Sah integral and a continuous charge model, which is derived by extending the parabolic potential approximation in all regions of the device operation. The proposed nonpiecewise model analytically describes the bulk and surface current mechanisms in JL CN FETs from the subthreshold region through the linear region to the saturation region without any fitting parameters. In addition, for each of these operation regions, the model reduces to simple expressions that explain the working principle of JL CN FETs. The model is compared with numerical simulations and shows good agreement.

引用

页码：155 / 157

页数：3

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