AFM study on MBE kink-flow growth of ordered InAs quantum dots on GaAs (001) vicinal surface misoriented towards the [010] direction

被引：0

作者：

Evtikhiev, VP ^{[1
]}

Kryganovskii, AK ^{[1
]}

Komissarov, AB ^{[1
]}

Titkov, AN ^{[1
]}

Ichida, M ^{[1
]}

Nakamura, A ^{[1
]}

机构：

[1] NAGOYA UNIV, NAGOYA, AICHI, JAPAN

来源：

COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The InAs quantum dots (QD's) were grown by MBE method on the (001) GaAs vicinal surfaces misoriented to the direction [010] by the 1, 2, 3, 4 and 6 degrees. Crossing of the terraces going on such surfaces in the [110] and [-110] directions creates a net of steps which modify the surface diffusion of In adatoms. The AFM studies of the grown structures have demonstrated the relevant characteristic changes in the ensemble of InAs QD's MBE grown on such surfaces.

引用

页码：351 / 354

页数：4

共 5 条

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