Ultra-low threshold polariton lasing in photonic crystal cavities

被引:62
作者
Azzini, Stefano [1 ,2 ]
Gerace, Dario [1 ,2 ]
Galli, Matteo [1 ,2 ]
Sagnes, Isabelle [3 ]
Braive, Remy [3 ]
Lemaitre, Aristide [3 ]
Bloch, Jacqueline [3 ]
Bajoni, D. [2 ,4 ]
机构
[1] Dipartimento Fis A Volta, I-27100 Pavia, Italy
[2] UdR CNISM, I-27100 Pavia, Italy
[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[4] Dipartimento Elettron, I-27100 Pavia, Italy
关键词
LASERS; LITHOGRAPHY; FABRICATION;
D O I
10.1063/1.3638469
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors show clear experimental evidence of lasing of exciton polaritons confined in L3 photonic crystal cavities. The samples are based on an InP membrane in air containing five InAsP quantum wells. Polariton lasing is observed with thresholds as low as 120 nW, below the Mott transition, while conventional photon lasing is observed for a pumping power one to three orders of magnitude higher. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638469]
引用
收藏
页数:3
相关论文
共 32 条
[1]   High-Q photonic nanocavity in a two-dimensional photonic crystal [J].
Akahane, Y ;
Asano, T ;
Song, BS ;
Noda, S .
NATURE, 2003, 425 (6961) :944-947
[2]   Exciton polaritons in two-dimensional photonic crystals [J].
Bajoni, D. ;
Gerace, D. ;
Galli, M. ;
Bloch, J. ;
Braive, R. ;
Sagnes, I. ;
Miard, A. ;
Lemaitre, A. ;
Patrini, M. ;
Andreani, L. C. .
PHYSICAL REVIEW B, 2009, 80 (20)
[3]   Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities [J].
Bajoni, Daniele ;
Senellart, Pascale ;
Wertz, Esther ;
Sagnes, Isabelle ;
Miard, Audrey ;
Lemaitre, Aristide ;
Bloch, Jacqueline .
PHYSICAL REVIEW LETTERS, 2008, 100 (04)
[4]   Photon lasing in GaAs microcavity:: Similarities with a polariton condensate [J].
Bajoni, Daniele ;
Senellart, Pascale ;
Lemaitre, Aristide ;
Bloch, Jacqueline .
PHYSICAL REVIEW B, 2007, 76 (20)
[5]   Investigation of SOI photonic crystals fabricated by both electron-beam lithography and nanoimprint lithography [J].
Belotti, M ;
Galli, M ;
Bajoni, D ;
Andreani, LC ;
Guizzetti, G ;
Decanini, D ;
Chen, Y .
MICROELECTRONIC ENGINEERING, 2004, 73-4 :405-411
[6]   Strong-coupling regime in pillar semiconductor microcavities [J].
Bloch, J ;
Planel, R ;
Thierry-Mieg, V ;
Gerard, JM ;
Barrier, D ;
Marzin, JY ;
Costard, E .
SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (03) :371-374
[7]   Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity [J].
Christmann, Gabriel ;
Butte, Raphael ;
Feltin, Eric ;
Carlin, Jean-Francois ;
Grandjean, Nicolas .
APPLIED PHYSICS LETTERS, 2008, 93 (05)
[8]   GaAs photonic crystal cavity with ultrahigh Q:: microwatt nonlinearity at 1.55 μm [J].
Combrie, Sylvain ;
De Rossi, Alfredo ;
Tran, Quynh Vy ;
Benisty, Henri .
OPTICS LETTERS, 2008, 33 (16) :1908-1910
[9]   Polariton quantum boxes in semiconductor microcavities [J].
El Daïf, O ;
Baas, A ;
Guillet, T ;
Brantut, JP ;
Kaitouni, RI ;
Staehli, JL ;
Morier-Genoud, F ;
Deveaud, B .
APPLIED PHYSICS LETTERS, 2006, 88 (06)
[10]   Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal [J].
Englund, D ;
Fattal, D ;
Waks, E ;
Solomon, G ;
Zhang, B ;
Nakaoka, T ;
Arakawa, Y ;
Yamamoto, Y ;
Vuckovic, J .
PHYSICAL REVIEW LETTERS, 2005, 95 (01)