The effect of neutron irradiation on the properties of n-InSb whisker microcrystals

The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n(+)-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated (n approximate to (6-7) x 10(17) cm(-3)). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation (transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n(+)-InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately. (c) 2005 Pleiades Publishing, Inc.