Design of Dual-band Power Amplifier Based on Band-Stop Input Matching Structure

被引：4

作者：

Gui, Xian ^{[1
]}

Yu, Cuiping ^{[1
]}

Li, Shulan ^{[1
]}

Su, Ming ^{[1
]}

Liu, Yuanan ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Beijing Key Lab Work Safety Intelligent Monitorin, Sch Elect Engn, Beijing, Peoples R China

来源：

2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年

关键词：

Dual band; high efficiency; power amplifier;

D O I：

10.1109/APMC52720.2021.9661626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a dual-band Power Amplifier (PA) with a novel dual-band input matching network (IMN) is presented. The proposed dual-band input matching structure can extend the bandwidth of the two passbands and make excellent isolation between the two passbands. In order to verify the method, a 1.8/2.6 GHz dual-band high-efficiency PA adopted a GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) is presented. Experimental results showed that the drain efficiencies (DE) are 72.3% and 70.2% with output power of 40 dBm and 40.5 dBm at 1.8 GHz and 2.6 GHz, respectively. The bandwidth has been extended to 200MHz at each passband.

引用

页码：488 / 490

页数：3

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