Influence of tartaric acid on linear-nonlinear optical and electrical properties of KH2PO4 crystal

被引:55
|
作者
Baig, M. I. [1 ]
Anis, Mohd [2 ]
Muley, G. G. [2 ]
机构
[1] Prof Ram Meghe Coll Engn & Management, Amravati 444701, Maharashtra, India
[2] St Gadge Baba Amravati Univ, Dept Phys, Amravati 444602, Maharashtra, India
关键词
Photonic crystal; Nonlinear optical materials; Optical studies; Microscopic studies; Electrical studies; LASER DAMAGE THRESHOLD; DIELECTRIC-PROPERTIES; PHYSICAL-PROPERTIES; SHG EFFICIENCY; SINGLE-CRYSTAL; KDP CRYSTALS; ZTC CRYSTAL; GROWTH; NLO; HYDROGEN;
D O I
10.1016/j.optmat.2017.05.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
KH2PO4 (KDOP) is widely demanded technological crystal for applications in laser driven photonic devices. Therefore, present article is focused to investigate the effect of tartaric acid (TA) on laser induced nonlinear optical properties of KDOP crystal. The optically transparent TA doped KDOP crystal of size 15 x 10 x 04 mm(3) has been grown by slow solvent evaporation technique at 35 degrees C. The structural analysis of pure and TA doped KDOP crystal has been achieved by means of single crystal X-ray diffraction technique. The functional groups of TA doped ICDOP crystal has been identified by means of Fourier transform infrared spectral analysis. The UV-isible studies have been performed to determine the optical transparency and evaluate the linear optical constants of pure and TA doped KDOP crystal. The Kurtz-Perry test has been employed to confirm the frequency doubling phenomenon of crystal and the SHG efficiency of TA doped KDOP crystal is found to be 5.68 times higher than that of standard KDP material. The Z-scan technique has been employed to explore the third order nonlinear optical (TONLO) refraction (n(2)), absorption (0) and susceptibility (chi(3)) of pure and TA doped KDOP crystal at 632.8 nm. The TA facilitated optical switching in TONLO response of KDOP crystal is found to be an interesting effect to examine. The laser damage threshold of TA doped KDOP crystal has been determined at 1064 nm using the Nd:YAG laser. The comparative electrical analysis on pure and TA doped KDOP crystal has been accomplished by means of dielectric and photoconductivity characterization studies. (C) 2017 Elsevier B.V. All rights reserved.
引用
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页码:1 / 7
页数:7
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