Band gap and Debye temperature of the alloys of SbTeSe: An ab-initio study

被引：0

作者：

Mahalakshmi, K. ^{[1
]}

Sankar, S. ^{[1
]}

Sathyakumari, V. S. ^{[1
]}

Subhashree, G. ^{[1
]}

Krithiga, R. ^{[1
]}

机构：

[1] Anna Univ, Div Appl Sci & Humanities, Condensed Matter Lab, Dept Phys, Madras Inst Technol Campus, Madras 600044, Tamil Nadu, India

来源：

2014 International Conference on Science Engineering and Management Research (ICSEMR) | 2014年

关键词：

Fermi energy; density of states; bulk modulus; Debye temperature; THIN-FILMS; PHYSICAL-PROPERTIES; ANTIMONY SELENIDE; SB2SE3; SB2TE3-XSEX; CRYSTALLINE; 1ST-PRINCIPLES; REFINEMENT; TRANSITION; TRANSPORT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band gap and Debye temperature of the antimony alloys of the form Sb2TexSe3-x (x = 3, 2, 1, 0), have been computed and the results are corroborated well with the earlier experimental reports. The required input data such as Fermi energy, density of states, etc., have been obtained by using the well known tight binding linear muffin tin orbital technique.

引用

页数：4

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