Hole Gas Induced by Defects in Ge/Si Core-Shell Nanowires

被引：2

作者：

Park, J. -S. ^{[1
]}

Ryu, B. ^{[1
]}

Moon, C. -Y. ^{[2
,3
]}

Chang, K. J. ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Daejeon 305701, South Korea

[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea

[3] Yonsei Univ, IPAP, Seoul 120749, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Core-shell nanowire; dangling bond defect; Au impurity; electronic structure; TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; HETEROSTRUCTURES;

D O I：

10.1063/1.3666374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the defect levels of surface Si dangling bond (DB) and substitutional Au defects at/near the surfaces of Ge/Si core-shell nanowires through spin-polarized density-functional calculations. Both surface Si DB and substitutional Au defects induce hole carriers in the Ge core by trapping electrons from the valence band maximum state. The reduced scattering by spatial separation of hole carriers and charge traps leads to the ballistic transport in core-shell nanowire structures.

引用

页数：2

共 13 条

[1] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
CEPERLEY, DM
ALDER, BJ
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
[2] Influence of surface states on electron transport through intrinsic Ge nanowires
Hanrath, T
Korgel, BA
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (12) : 5518 - 5524
[3] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G
Furthmuller, J
[J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11169 - 11186
[4] Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
Kresse, G
Furthmuller, J
[J]. COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) : 15 - 50
[5] One-dimensional hole gas in germanium/silicon nanowire heterostructures
Lu, W
Xiang, J
Timko, BP
Wu, Y
Lieber, CM
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (29) : 10046 - 10051
[6] SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1746 - 1747
[7] Structural and electronic properties of epitaxial core-shell nanowire heterostructures
Musin, RN
Wang, XQ
[J]. PHYSICAL REVIEW B, 2005, 71 (15):
[8] Defects Responsible for the Hole Gas in Ge/Si Core-Shell Nanowires
Park, Ji-Sang
Ryu, Byungki
Moon, Chang-Youn
Chang, K. J.
[J]. NANO LETTERS, 2010, 10 (01) : 116 - 121
[9] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS
PERDEW, JP
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5048 - 5079
[10] Schmidt V., 2009, ADV MATER, V21, P1

← 1 2 →